SiHFBC40LC mosfet equivalent, power mosfet.
600 V 1.2
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Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V, VGS Rating Reduced Ciss, Coss, Crss Extremely Hi.
Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. These device improvements.
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive.
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